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S0MCF2PC FC6155 2N540 520003 05DB2 8ETU04 50110 ZMY75
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  Datasheet File OCR Text:
 25 -8V 20 -4.5V -3.0V -2.0V
10 Vds=-5V 8
-Id (A)
-Id (A)
15
-2.5V
6
10 Vgs=-1.5V 5
4
125C
2
25C
0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 80 Vgs=-1.8V
0 0 0.5 1 1.5 2 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6
Normalized On-Resistance
Id=-4.7A, Vgs=-2.5V 1.4 Id=-2A, Vgs=-1.8V
Rds(on) (m:)
60 Vgs=-2.5V 40 Vgs=-4.5V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.2
Id=-4.7A, Vgs=-4.5V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
100 90 80 Id=-4.7A
1E+01 1E+00 1E-01 125C
Rds(on) (m:)
-Is (A)
70 60 50 40 30 25C 125C
1E-02 1E-03 1E-04 1E-05 1E-06
25C
20 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=-10V Id=-4.7A
2400 2000 Ciss
Capacitance (pF)
-Vgs (Volts)
1600 1200 800 Coss 400 Crss 0
3 2
1 0 0 5 10 15 20 -Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
-Vds (Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150C Ta=25C
40 10Ps 30 100Ps 1ms Tj(max)=150C Ta=25C
-Id (Amps)
Power (W)
Rds(on) 10.0 limited
20
1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) 10
10ms 0.1s
10
100
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/(Ton+T) Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
Pd Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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